0100-71267 半导体材料模块 控制电路板组件

0100-71267 半导体材料模块 控制电路板组件

AMAT工控模块0100-71224，0100-71313 0100-71311 0100-77037 0100-71313 0100-71311 0100-71309 0100-71278 0100-71267 IGCT 需要一个导通保护网络(本质上是一个电感器)来限制电流上升率。

但是，与 GTO 相比，关断保护网络是可选的。它可以以略微降低的关断电流能力为代价被省略。 IGBT 和 IGCT 是四层器件，乍一看并没有什么不同。但是，当您“ 深入了解”时，您会发现绝缘栅双极晶体管 (IGBT) 和集成(有时称为“绝缘 ”)门极换向晶闸管 (IGCT) 并不相似。

双极晶体管构成了 IGBT 的基础，而 IGCT 则与栅极关断晶闸管 (GTO) 相关。IGBT 和 IGCT 都是为工业应用而开发的。IGBT 可以在 10+ 千赫兹 (kHz) 的频率下切换，而 IGCT 的频率限制在 1 kHz 左右。

0100-71267 半导体材料模块 控制电路板组件

AMAT Industrial Control module 0100-71224, 0100-71313 0100-71311 0100-77037 0100-71313 0100-71311 0100-71309 0100-71278 0100-71267 IGCT  A on-protection network (essentially an inductor) is required to limit the current rise rate.

However, in contrast to the GTO, turning off the protected network is optional. It can be omitted at the cost of a slightly reduced ability to turn off the current. Igbts and IGCTs are four-layer devices that do not look different at first glance. However, when you "dig a little deeper," you realize that insulated gate bipolar transistors (IGBTs) and integrated (sometimes called "insulated") gate commutator thyristors (IGCT) are not similar.

The bipolar transistor forms the basis of the IGBT, while the IGCT is related to the gate turn-off thyristor (GTO). Both IGBT and IGCT were developed for industrial applications. Igbts can be switched at frequencies of 10+ kilohertz (kHz), while IGCTs are limited to frequencies of around 1 kHz.