5SHX264510002 绝缘栅双极型晶体管

5SHX264510002 绝缘栅双极型晶体管

IGBT(Insulated Gate Bipolar Transistor)，绝缘栅双极型晶体管，是由BJT（双极型三极管）和MOS（绝缘栅型场效应管）组成的复合全控型电压驱动式功率半导体器件， 兼有MOSFET的高输入阻抗和GTR的低导通压降两方面的优点。

GTR饱和压降低，载流密度大，但驱动电流较大；MOSFET驱动功率很小，开关速度快，但导通压降大，载流密度小。

IGBT综合了以上两种器件的优点，驱动功率小而饱和压降低。

5SHX264510002 绝缘栅双极型晶体管

IGBT(Insulated Gate Bipolar Transistor) is a compound fully controlled voltage-driven power semiconductor device composed of BJT (bipolar triode) and MOS (insulated gate field effect tube). It has the advantages of high input impedance of MOSFET and low on-voltage drop of GTR.

The saturation voltage of GTR is lower, the current carrying density is higher, but the driving current is larger. MOSFET drive power is small, the switching speed is fast, but the on-voltage drop is large, the current carrying density is small.

IGBT combines the advantages of the above two devices, and the driving power is small and the saturation voltage is reduced.

5SHX264510002 绝缘栅双极型晶体管