3BHB045647R0003 半导体可控硅模块 半导体面结型二极管

3BHB045647R0003 半导体可控硅模块 半导体面结型二极管

双向可控硅是一种以硅单晶为基本材料的P1N1P2N2四层三端器件，是在普通可控硅的基础上发展而成的交流开关器件，其英文名称TRIAC即三端双向交流开关之意，发明于1957年。双向可控硅为单向导电性开关，能代替两只反极性并联的可控硅，而且仅需一个触发电路。可控硅具有导通和关断两种状态，从外形上区分主要有：螺栓形、平板形和平底形三类。

由于双向可控硅特性类似于真空闸流管，所以国际上通称为硅晶体闸流管，简称可控硅T;又由于可控硅zui初应用于可控整流方面，所以又称为硅可控整流元件，简称为可控硅SCR。

双向可控硅结构原理图
双向可控硅属于NPNPN五层器件，三个电极分别是T1、T2、G。尽管从形式上可将双向可控硅看成两只普通可控硅的组合，但实际上它是由7只晶体管和多只电阻构成的功率集成器件。

因该器件可以双向导通，故除门极G以外的两个电极统称为主端子，用T1、T2。表示，不再划分成阳极或阴极。其特点是，当G极和T2极相对于T1，的电压均为正时，T2是阳极，T1是阴极。反之，当G极和T2极相对于T1的电压均为负时，T1变成阳极，T2为阴极。双向可控硅由于正、反向特性曲线具有对称性，所以它可在任何一个方向导通。

3BHB045647R0003 半导体可控硅模块 半导体面结型二极管

Bidirectional thyristor is a silicon single crystal as the basic material of P1N1P2N2 four-layer three-terminal device, is developed on the basis of ordinary thyristor AC switching device, its English name TRIAC is the meaning of three-terminal bidirectional AC switch, invented in 1957. Bidirectional thyristor is a unidirectional conductivity switch, which can replace two thyristors in parallel with reverse polarity, and only one trigger circuit is required. Thyristor has two states of on and off, which are mainly distinguished from the shape of bolt, plate and bottom.

Because the characteristics of bidirectional thyristor are similar to vacuum thyristor, it is known internationally as silicon thyristor, or thyristor T for short; And because thyristor was originally used in controlled rectification, it is also called silicon controllable rectifier element, referred to as SCR.

Bidirectional thyristor structure schematic diagram
The bidirectional thyristor belongs to the NPNPN five-layer device, and the three electrodes are T1, T2 and G. Although the bidirectional thyristor can be formally regarded as a combination of two ordinary thyristors, it is actually a power integrated device composed of seven transistors and several resistors.

Because the device can be double-guided, the two electrodes except gate G are collectively referred to as the main terminal, with T1 and T2. Indicates that it is no longer divided into anode or cathode. It is characterized by the fact that when the voltage of the G and T2 poles is positive relative to T1, T2 is the anode and T1 is the cathode. Conversely, when the voltage of the G and T2 poles relative to T1 is negative, T1 becomes the anode and T2 becomes the cathode. Because of the symmetry of the positive and reverse characteristic curves, the bidirectional thyristor can be switched on in any direction.

3BHB045647R0003 半导体可控硅模块 半导体面结型二极管