5SHY3545L0014 可控硅控制单元

5SHY3545L0014 可控硅控制单元

半导体的出现成为20世纪现代物理学其中一项zui重大的突破，标志着电子技术的诞生。而由于不同领域的实际需要，促使半导体器件自此分别向两个分支快速发展，其中一个分支即是以集成电路为代表的微电子器件，特点为小功率、集成化，作为信息的检出、传送和处理的工具；而另一类就是电力电子器件，特点为大功率、快速化。1955年，美国通用电气公司发表了世界上第 一个以硅单晶为半导体整流材料的硅整流器（SR），1957年又发表了全球首 个用于功率转换和控制的可控硅整流器（SCR）。由于它们具有体积小、重量轻、效率高、寿命长的优势，尤其是SCR能以微小的电流控制较大的功率，让半导体电力电子器件成功从弱电控制领域进入了强电控制领域、大功率控制领域。在整流器的应用上，晶闸管迅速取代了水银整流器（引燃管），使得整流器固体化、静止化和无触点化，并显著的节省能源。从1960年代开始，由普通晶闸管相继衍生出了快速晶闸管、光控晶闸管、不对称晶闸管及双向晶闸管等各种特性的晶闸管，形成一个庞大的晶闸管家族。

但晶闸管本身存在两个制约其继续发展的重要因素。一是控制功能上的欠缺，普通的晶闸管属于半控型器件，通过闸极（控制极）只能控制其开通而不能控制其关断，导通后控制极即不再起作用，要关断必须切断电源，即令流过晶闸管的正向电流小于维持电流。由于晶闸管的关断不可控的特性，必须另外配以由电感、电容及辅助开关器件等组成的强迫换流电路，从而使装置体积增大，成本增加，而且系统更为复杂、可靠性降低。二是因为此类器件立足于分立器件结构，开通损耗大，工作频率难以提高，限制了其应用范围。1970年代末，随着可关断晶闸管（GTO）日趋成熟，成功克服了普通晶闸管的缺陷，标志着电力电子器件已经从半控型器件发展到全控型器件。

5SHY3545L0014 可控硅控制单元

The emergence of semiconductors became one of the most significant breakthroughs in modern physics in the 20th century, marking the birth of electronic technology. Due to the actual needs of different fields, the semiconductor devices have since developed rapidly to two branches, one of which is the microelectronics device represented by the integrated circuit, characterized by low power and integration, as a tool for information detection, transmission and processing; The other is power electronic devices, characterized by high power and fast speed. In 1955, the United States General Electric Company published the world's first silicon rectifier (SR) with silicon single crystal as semiconductor rectifier material, and in 1957 published the world's first thyristor rectifier (SCR) for power conversion and control. Because they have the advantages of small size, light weight, high efficiency and long life, especially SCR can control large power with small current, so that semiconductor power electronic devices have successfully entered the field of strong current control from the field of weak current control. In the application of rectifiers, the thyristor quickly replaced the mercury rectifier (ignition tube), making the rectifier solid, static and contactless, and significantly saving energy. From the 1960s, the common thyristors have successively derived from the fast thyristors, photocontrolled thyristors, asymmetrical thyristors and bidirectional thyristors, forming a huge thyristor family.

However, there are two important factors that restrict the development of thyristors. One is the lack of control function, the ordinary thyristor is a semi-controlled device, through the gate (control pole) can only control its opening and can not control its off, the control pole is no longer effective after the turn-on, to turn off must cut off the power supply, even if the positive current flowing through the thyristor is less than the maintenance current. Due to the uncontrollable switching characteristics of thyristor, a forced commutator circuit composed of inductors, capacitors and auxiliary switching devices must be added, which increases the volume of the device, increases the cost, and makes the system more complex and reduces the reliability. Second, because such devices are based on the discrete device structure, the opening loss is large, the operating frequency is difficult to improve, and its application range is limited. In the late 1970s, with the maturity of the turn-off thyristor (GTO), the defects of ordinary thyristors were successfully overcome, marking the development of power electronic devices from semi-controlled devices to fully controlled devices.

5SHY3545L0014 可控硅控制单元